2020

201. AlGaN Deep Ultraviolet Light-Emitting Diodes with Localized Surface Plasmon Resonance by high-density array of 40 nm Al Nanoparticles

Jong Won Lee, Gyeongwon Ha, Jeonghyeon Park, Hyun Gyu Song, Jaeyong Park, Jaeyong Lee, Yong-Hoon Cho, Jong-Lam Lee, Jin Kon Kim, and Jong Kyu Kim*

ACS Appl. Mater. Interfaces (Accepted) 

200. Control of magnesium in vitro degradation based on ultrafine-grained surface gradient structure using ultrasonic nanocrystalline surface modification

Seung Mi Baek, Il Yong Choi, Ji Hyun Moon, Umarov Rakhmatjon, Jae H. Kim, Nack J. Kim, Jong Kyu Kim, Auezhan Amanov, Hyoung Seop Kim*

Materialia (Accepted) 

199. Microwave-Assisted Evolution of WO3 and WS2/WO3 Hierarchical Nanotrees

Noho Lee†, Junghyeok Kwak†, Ji Hye Kwak, Sang-Mun Jung, Jaerim Kim, Anupam Giri, Kaliannan Thiyagarajan, Yong-Tae Kim, Sunshin Jung*, Jong Kyu Kim* and Unyong Jeong*

Journal of Materials Chemistry A, 8, 9654-9660 (2020)

198. Counter-intuitive junction temperature behavior in AlGaN-based deep-ultraviolet light-emitting diodes

Dong Yeong Kim, Jeonghyeon Park, Jaehee Cho*, Jong Kyu Kim*

AIP advances 10.4: 045135 (2020)

197. Remote heteroepitaxy of GaN microrod heterostructures for deformable light‐emitting diodes and wafer recycle

Junseok Jeong,*, Qingxiao Wang*, Janghwan Cha*, Dae Kwon Jin, Dong Hoon Shin, Sunah Kwon, Bong Kyun Kang, Jun Hyuk Jang, Woo Seok Yang, Yong Seok Choi, Jinkyoung Yoo, Jong Kyu Kim, Chul‐Ho Lee, Sang Wook Lee, Anvar Zakhidov, Suklyun Hong†, Moon J. Kim†, Young Joon Hong† ([*] These authors contributed equally to this work.)

Science Advances, 6(23), eaaz5180 (2020).

196. Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors

Hyunah Kwon‡, Hocheon Yoo‡, Masahiro Nakano, Kazuo Takimiya, Jae-Joon Kim* and Jong Kyu Kim* ([‡] These authors contributed equally to this work.)

RSC Advances 10, 1910-1916 (2020)

195. van der Waals gap-inserted light-emitting p–n heterojunction of ZnO nanorods/graphene/p-GaN film

Sung Ho Moon, Junseok Jeong, Gwan Woo Kim, Dae Kwon Jin, Yong-Jin Kim, Jong Kyu Kim, Keun Soo Kim, Gunn Kim, Young Joon Hong

Current Applied Physics 20, 352-357 (2020)

 

2019

194. Enhanced Catalytic Activity of Edge-Exposed 1T phase WS2 grown directly on WO3 Nanohelical Array for Water Splitting

Noho Lee, Il Yong Choi, Kyung-Yeon Doh, Jaewon Kim, Hyeji Sim, Donghwa Lee, Si-Young Choi,* and Jong Kyu Kim*

Journal of Materials Chemistry A 7, 26378 (2019)

193. Transfer or delivery of micro light-emitting diodes for light-emitting diode displays

Jaehee Cho and Jong Kyu Kim

AIP Advances 9, 100901 (2019)

192. Self-protective GaInN-based light-emitting diodes with VO2 nanowires

Jong Won Lee, Jeonghyeon Park, Heera Kwon, Woong-Ki Hong, Jong Kyu Kim, and Jaehee Cho

Nanoscale 11, 18444 (2019)

191. Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Seung Hee Lee, Hokyeong Jeong, Odongo Francis Ngome Okello, Shiyu Xiao, Seokho Moon, Dong Yeong Kim, Gi-Yeop Kim, Jen-Iu Lo, Yu-Chain Peng, Bing-Ming Cheng, Hideto Miyake, Si-Young Choi & Jong Kyu Kim

Scientific Reports 9, 10590 (2019)

190. High-Output and Bending-Tolerant Triboelectric Nanogenerator Based on an Interlocked Array of Surface-Functionalized Indium Tin Oxide Nanohelixes

Sungwoo Chun§, Il Yong Choi§, Wonkyeong Son, Jaimyun Jung, Sangmin Lee, Hyoung Seop Kim, Changhyun Pang, Wanjun Park*, and Jong Kyu Kim* ([§] These authors contributed equally to this work.)

ACS Energy Letters 4, 1748−1754 (2019)

189. Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure

Seung Hee Lee, Hokyeong Jeong, Dong Yeong Kim, Seung-Young Seo, Cheolhee Han, Odongo Francis Ngome Okello, Jen-Iu Lo, Yu-Chain Peng, Chan-Hyoung Oh, Gyeong Won Lee, Jong-In Shim, Bing-Ming Cheng, Kyung Song, Si-Yong Choi, Moon-Ho Jo, and Jong Kyu Kim

Optics Express 27, 19692-19701 (2019)

188. Amorphous Tin Oxide Nanohelix Structures Based Electrode for Highly Reversible Na-Ion Batteries

Il Yong Choi§, Changshin Jo§, Won-Gwang Lim, Jong-Chan Han, Byeong-Gyu Chae, Chan Gyung Park, Jinwoo Lee*, and Jong Kyu Kim* ([§] These authors contributed equally to this work.)

ACS Nano 13, 6513−6521 (2019)

187. Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition

Hokyeong Jeong, Dong Yeong Kim, Jaewon Kim, Seokho Moon, Nam Han, Seung Hee Lee, Odongo Francis Ngome Okello, Kyung Song, Si-Young Choi, and Jong Kyu Kim

Scientific Reports 9, 5736 (2019)

186. Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs

Chang-Soo Lee§, Seung Jae Oh§, Hoseok Heo, Seung-Young Seo, Juho Kim, Yong Hyeon Kim, Donghwi Kim, Odongo Francis Ngome Okello, Hocheol Shin, Ji Ho Sung, Si-Young Choi, Jun Sung Kim, Jong Kyu Kim, and Moon-Ho Jo ([§] These authors contributed equally to this work.)

Nano Letters 19, 1814-1820 (2019)

185. Overcoming ineffective resistance modulation in p-type NiO gas sensor by nanoscale Schottky contacts

Yuna Lee§, Hyunah Kwon§, JunSik Yoon, Jong Kyu Kim ([§] These authors contributed equally to this work.)

Nanotechnology 30, 115501 (2019)

2018

 

184. Microwave-assisted synthesis of group 5 transition metal dichalcogenide thin films

Junghyeok Kwak, Sunshin Jung, Noho Lee, Kaliannan Thiyagarajan, Jong Kyu Kim, Anupam Giri* and Unyong Jeong*

Journal of Materials Chemistry C  6, 11303-11311 (2018)

183. Performance of Recessed Anode AlGaN/GaN Shottky Barrier Diode Passivated with High Temperature Atomic Layer-Deposited Al2O3 Layer 

Jae-Hoon Lee, Ki-Sik Im, Jong Kyu Kim, and Jung-Hee Lee

IEEE Transactions on Electron Devices (2018)

182. Epitaxial growth of WO3 nanoneedles by flame: engineering of hole transport and water oxidation reactivity

Xinjian Shi§, Lili Cai§, Il Yong Choi§, Ming Ma, Kan Zhang, Jiheng Zhao, Jung Kyu Kim, Jong Kyu Kim*, Xiaolin Zheng* and Jong Hyeok Park* ([§] These authors contributed equally to this work.)

Journal of Materials Chemistry A  6, 19542-19546 (2018)

181. Pyramidal Metal–dielectric hybrid-structure geometry with an asymmetric TiO2 layer for broadband light absorption and photocatalytic applications

Hee Jun Kim, Junho Jun, Hak-Jong Choi, Hyunah Kwon, Junha Park, Changwon Seo, Jong Kyu Kim, Jonghwa Shin, Jeongyong Kim, Heon Lee, Jeong Min Baik

Nano Energy 53, 468-474 (2018)

180. A Highly Sensitive Force Sensor with Fast Response Based on Interlocked Arrays of Indium Tin Oxide                Nanosprings Toward Human Tactile Perception

Sungwoo Chun§, Il Yong Choi§, Wonkyeong Son, Gi Yoon Bae, Eun Jae Lee, Hyunah Kwon, Jaimyun Jung, Hyoung Seop Kim, Jong Kyu Kim*, Wanjun Park* ([§] These authors contributed equally to this work.)

Advanced Functional Materials 28, 1804132 (2018) [Inside Back Cover]

179. Multiple Heterojunction in Single Titanium Dioxide Nanoparticles for Novel Metal-free Photocatalysis

Yoonjun Cho, Sungsoon Kim, Bumsu Park, Chang-Lyoul Lee, Jung Kyu Kim, Kug-Seung Lee, Il Yong Choi, Jong Kyu Kim, Kan Zhang*, Sang Ho Oh*, Jong Hyeok Park*

Nano Letters 18, 4257-4262 (2018)

178. Defect-Mediated In-Plane Electrical Conduction in Few-Layer sp2-hybridized Boron Nitride

Dong Yeong Kim, Hokyeong Jeong, Jaewon Kim, Nam Han, Jong Kyu Kim*

ACS Applied Matererials & Interfaces 10, 20, 17287-17294 (2018)

177. Low Temperature Solution-Processable Cesium Lead Bromide Microcrystals for Light Conversion

Quyet Van Le, Jong Won Lee, Woonbae Sohn, Ho Won Jang*, Jong Kyu Kim*, and Soo Young Kim*

Crystal Growth & Design 18, 5, 3161-3166 (2018)

176. Fundamental Limitations of Wide-Bandgap Semiconductors for Light-Emitting Diodes

Jun Hyuk Park, Dong Yeong Kim, E. Fred Schubert, Jaehee Cho, and Jong Kyu Kim*

ACS Energy Letters 3, 655-662 (2018) 

175. Wavelength-dependent visible light response in vertically aligned nanohelical TiO2-based Schottky diodes

Hyunah Kwon, Ji Ho Sung, Yuna Lee, Moon-Ho Jo, and Jong Kyu Kim*

Applied Physics Letters, 112, 043106 (2018)

174. Strain-induced Indium Clustering in Non-polar InGaN Quantum Wells

Ja Kyung Lee, Bumsu Park, Kyung Song, Woo Young Jung, Dmitry Tyutyunnikov, Tiannan Yang, Christoph T. Koch, Chan Gyung Park, Peter A. van Aken, Young-Min Kim, Jong Kyu Kim, Junhyeok Bang, Long-Qing Chen, Sang Ho Oh

Acta Materialia 145, 109-122 (2018)

173. Observation of space-charge-limited current in AlGaN/GaN ultraviolet light-emitting diodes

Jun Hyuk Park, Jong Kyu Kim, and Jaehee Cho

Materials Letters 214, 217-219 (2018)

172. An array of metal oxides nanoscale hetero p-n junctions toward designable and highly-selective gas sensors

Hyunah Kwon, Jun-Sik, Yuna Lee, Dong Yeong Kim, Chang-Ki Baek* and Jong Kyu Kim*

Sensors and actuators B: Chemical 255, 1663–1670, (2018)

171. Directly Assembled 3D Molybdenum Disulfide on Silicon Wafer for Efficient Photoelectrochemical Water Reduction

Dinsefa Mensur Andoshe, Gangtae Jin, Chang‐Soo Lee, Changyeon Kim, Ki Chang Kwon, Seokhoon Choi, Woonbae Sohn, Cheon Woo Moon, Seung Hee Lee, Jun Min Suh, Sungwoo Kang, Jaehyun Park, Hoseok Heo, Jong Kyu Kim, Seungwu Han, Moon‐Ho Jo, Ho Won Jang

Advanced sustainable systems 2, 1700142 (2018)

 

2017

170. The Effect of Imbalanced Carrier Transport on the Efficiency Droop in GaInN-Based Blue and Green Light-Emitting Diodes

Jun Hyuk Park, Jaehee Cho*, E. Fred Schubert and Jong Kyu Kim*

Energies 10(9), 1277 (2017)

169. Enhanced light extraction efficiency of micro-ring array AIGaN deep ultraviolet light-emitting diodes

Gabisa Bekele Fayisa, Jong Won Lee, Jung sub Kim, Yong-II Kim, Youngsoo Park, and Jong Kyu Kim

Japanese Journal of Applied Physics 56, 092101 (2017)

168. Optical and facet dependent carrier recombination properties of hendeca-facet InGaN/GaN micro light emitters

Sunyong Hwang, Nam Han, Hokyeong Jeong, Jun-Hyuk Park, Seung-Hyuk Lim, Jong-Hoi Cho, Yong-Hoon Cho, Hyeon Jun Jeong, Mun Seok Jeong, and Jong Kyu Kim*

Crystal Growth & Design 17(7), 3649-3655 (2017) 

167. Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

Donghyun Lee§, Jong Won Lee§, Jeonghwan Jang, In-Su Shin, Lu Jin, Jun Hyuk Park, Jungsub Kim, Jinsub Lee, Hye-Seok Noh, Yong-Il Kim, Youngsoo Park, Gun-Do Lee, Yongjo Park, Jong Kyu Kim*, and Euijoon Yoon*

Applied Physics Letters 110, 191103 (2017)

166. Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

Dong Yeong Kim, Nam Han, Hokyeong Jeong, Jaewon Kim, Sunyong Hwang, and Jong Kyu Kim*

AIP Advances 7, 045116 (2017)

165. Pressure dependent growth of wafer-scale few-layer h-BN by metal-organic chemical vapor deposition

Dong Yeong Kim, Nam Han, Hokyeong Jeong, Jaewon Kim, Sunyong Hwang, Kyung Song, Si-Young Choi, and Jong Kyu Kim*

Crystal Growth & Design 17, 2569-2575 (2017)

164. White light-emitting diodes: History, progress, and future

Jaehee Cho, Jun Hyuk Park, E. F. Schubert and Jong Kyu Kim

Laser & Photonics Reviews 11(2), 1600147 (2017)

163. Flexible Near-Field Wireless Optoelectronics as Subdermal Implants for Broad Applications in Optogenetics

Gunchul Shin,Adrian M. Gomez, Ream Al-Hasani, Yu Ra Jeong, Jeonghyun Kim, Zhaoqian Xie, Anthony Banks, Seung Min Lee, Sang Youn Han, Chul Jong Yoo, Jong-Lam Lee, Seung Hee Lee, Jonas Kurniawan, Jacob Tureb, Zhongzhu Guo, Jangyeol Yoon, Sung-Il Park, Sang Yun Bang, Yoonho Nam, Marie C. Walicki, Vijay K. Samineni, Aaron D. Mickle, Kunhyuk Lee, Seung Yun Heo, Jordan G. McCall, Taisong Pan, Liang Wang, Xue Feng, Tae-il Kim, Jong Kyu Kim, Yuhang Li, Yonggang Huang, Robert W. Gereau IV, Jeong Sook Ha, Michael R. Bruchas, and John A. Rogers

Neuron 93, 509-521 (2017)

162. Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

Jae-Seong Park, Jong Kyu Kim, Jaehee Cho and Tae-Yeon Seong*

ECS Journal of Solid State Science and Technology 6(4), Q42-Q52 (2017)

161. Highly-sensitive H2 sensor operating at room temperature using Pt/TiO2 nanoscale Schottky contacts

Hyunah Kwon, Yuna Lee, Sunyoung Hwang and Jong Kyu Kim

Sensors and Actuators B: Chemical 241, 985-992 (2017)

 

2016

160. Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane Emission

Jong Won Lee, Jun Hyuk Park, Dong Yeong Kim, E. Fred Schubert, Jungsub Kim, Jinsub Lee, Yong-ll Kim, Youngsoo Park and Jong Kyu Kim*

ACS Photonics 3 (11), 2030-2034 (2016)

159. Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

Junseok Jeong, Ji Eun Choi, Yong-Jin Kim, Sunyong Hwang, Sung Kyu Kim, Jong Kyu Kim, Hu Young Jeong and Young Joon Hong*

Applied Physics Letters 109, 101103 (2016)

158. Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films

Hyojin Yoon§, Minseok Choi§, Tae-Won Lim, Hyunah Kwon, Kyuwook Ihm, Jong Kyu Kim, Si-Young Choi and Junwoo Son* ([§] These authors contributed equally to this work.)

Nature Materials, 15 1113-1119 (2016)

157. Wafer-scale antireflective protection layer of solution-processed TiO2 nanorods for high performance silicon-based water splitting photocathodes

Dinsefa M. Andoshe, Seokhoon Choi, Young-Seok Shim, Seung Hee Lee, Yoonkoo Kim, Cheon Woo Moon, Do Hong Kim, Seon Yong Lee, Taemin Kim, Hoon Kee Park, Mi Gyoung Lee, JongMyeong Jeon, Ki Tae Nam, Miyoung Kim, Jong Kyu Kim, Jihun Oh*, Ho Won Jang*

Journal of Materials chemistry A 4, 9477-9485 (2016)

156. Unassisted photoelectrochemical water splitting exceeding 7% solar to hydrogen conversion efficiency using photon recycling

Xinjian Shi§, Hokyeong Jeong§, Seung Jae Oh, Ming Ma, Kan Zhang, Jeong Kwon, In Taek Choi, Il Yong Choi, Hwan Kyu Kim, Jong Kyu Kim*, and Jong Hyeok Park* ([§] These authors contributed equally to this work.)

Nature Communications 7, 11943 (2016)

155. Effect of curved graphene oxide in GaN light-emitting-diode for improving heat dissipation with patterned sapphire substrate

Min Han, Nam Han, Eun Jin Jung, Beo Deul Ryu, Kang Bok Ko, TranViet Cuong, Hyunsoo Kim, Jong Kyu Kim and Chang-Hee Hong

Semiconductor Science and Technology 31, 085010 (2016)

154. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

Jong Won Lee, Dong Yeong Kim, Jun Hyuk Park, E. Fred Schubert, Jungsub Kim, Jinsub Lee, Yong-Il Kim, Youngsoo Park and Jong Kyu Kim

Scientific Reports6, 22537 (2016)

153. Energy bandgap variation in oblique angle-deposited indium tin oxide

Kyurin Kim, Jun Hyuk Park, Hyunsoo Kim, Jong Kyu Kim, E.Fred Schubert and Jaehee Cho

Applied Physics Letters 108, 041910 (2016)

152. Haze-Free Highly Transparent Glass Substrates with Nanostructured Surface by Using Self-Assembled Ag Etch Masks

Dan Zhao, Illhwan Lee, Jae Yong Park, Sang-Hwan Cho, Chung Sock Choi, Seung-Yong Song, Jong Kyu Kim and Jong-Lam Lee

ECS Journal of Solid State Science and Technology 5 (2) R6-R11 (2016)

151. Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

Jun Hyuk Park, Jong Won Lee, Dong-Yeong Kim, Jaehee Cho, E. Schubert, Jungsub Kim, Jinsub Lee, Y.-I. Kim, YoungSoo Park, and Jong Kyu Kim

Journal of Applied Physics 119, 023101 (2016)

150. Highly photoresponsive and wavelength-selective circularly-polarized-light detector based on metal-oxides hetero-chiral thin film

Seung Hee Lee, Dhruv Pratap Singh, Ji Ho Sung, Moon-Ho Jo, Ki Chang Kwon, SooYoungKim, Ho Won Jang and Jong Kyu Kim

Scientific Reports 6, 19580 (2016)

 

2015

149. Visible Color Tunable Emission in Three-dimensional Light Emitting Diodes by MgO Passivation of Pyramid Tip

Ji-hyun Kim, Byeong Uk Ye, Joon mo Park, Chul Jong Yoo, Buem Joon Kim, Hu Young Jeong, Jin-Hoe Hur, Jong Kyu Kim, Jong-Lam Lee, Jeong Min Baik*

ACS Applied Materials & Interfaces 7 (50) 27743–27748(2015)

148. Temperature dependence of efficiency in GaInN/GaN light-emitting diodes with a GaInN underlayer

Kyurin Kim, David S. Meyaard, Guan-Bo Lin, E. Fred Schubert, Jong Kyu Kim, and Jaehee Cho*

International Journal of Applied Ceramic Technology 1-5 (2015)

147. Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior

Sunyong Hwang, Dong Yeong Kim, Junhyuk Park, Han-Youl Ryu, and Jong Kyu Kim

AIP Advances 5, 107104 (2015)

146. Three-Dimensional Metal-Oxides Nanohelix Arrays fabricated by Oblique-Angle Deposition: Fabrication, Properties, and Applications

Hyunah Kwon§ , Seung Hee Lee§ and Jong Kyu Kim

Nanoscale Research Letters 10, 369 (2015)

145. The effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes

Guan-Bo Lin, Bhishma Pandit, Yongjo Park, Jong Kyu Kim, Y. R. Ryu, E. Fred Schubert, and Jaehee Cho

Applied Physics Express 8, 092102 (2015)

144. The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Guan-Bo Lin, Xiaoguang Zhang , Soo Min Lee, George Papasouliotis, Jong Kyu Kim, E. Fred Schubert, Jaehee Cho

Current Applied Physics 15, 1222-1225 (2015)

143. Onset of the efficiency droop in GaInN quantum well light-emitting diodes under photoluminescence and electroluminescence excitation

Guan-Bo Lin*, E. Fred Schubert, Jaehee Cho*, Jun Hyuk Park, and Jong Kyu Kim

ACS Photonics 2, 1013-1018 (2015)

142. Spatially graded TiO2-SiO2 Bragg reflector with rainbow-colored photonic band gap

Dhruv Pratap Singh, Seung Hee Lee, Il Yong Choi, and Jong Kyu Kim*

Opt. Express 23, 17568-17575 (2015)

141. Distinct U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes

Jun Hyuk Park, Guan-Bo Lin, Dong Yeong Kim, Jong Won Lee, Jaehee Cho, Jungsub Kim, Jinsub Yi, Yong-Il Kim, Youngsoo Park, E. Fred Schubert, and Jong Kyu Kim

Opt. Express 23, 15398-15404 (2015)

140. Overcoming the Fundamental Limitation in Light-Extraction Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Utilizing Transverse-Magnetic-Dominant Emission

Dong Yeong Kim§, Jun Hyuk Park§, Jong Won Lee, Sunyong Hwang, Seung Jae Oh, Jungsub Kim, Cheolsoo Sone, E. Fred Schubert, and Jong Kyu Kim* ([§] These authors contributed equally to this work.)

Light: Science & Applications by NPG 4, e263 (2015)

139. Polarization-engineered high efficiency GaInN light-emitting diodes optimized by genetic algorithm

Dong Yeong Kim, Guan-bo Lin, Sunyong Hwang, Jun Hyuk Park, David Meyaard, E. Fred Schubert, Han Youl Ryu, and Jong Kyu Kim

IEEE Photonics Journal 7, 1300209 (2015)

138. Optoelectronic Property of TiO2 Nanohelices-embedded HC(NH2)2PbI3 Perovskite Solar Cells

Jin-Wook Lee§, Seung Hee Lee§, Hyun-Suk Ko, Jeong Kwon, Jong Hyeok Park, Seong Min Kang, Namyoung Ahn, Mansoo Choi, Jong Kyu Kim*, and Nam-Gyu Park* ([§] These authors contributed equally to this work.)

Journal of Materials Chemistry A 3, 9179-9186 (2015)

137. Enhanced power conversion efficiency of dye-sensitized solar cells with multifunctional photoanodes based on a three-dimensional TiO2 nanohelix array

Seung Hee Lee§, Jeong Kwon§, Dong Yeong Kim, Kyung Song, Sang Ho Oh, Jaehee Cho, E. Fred Schubert, Jong Hyeok Park*, Jong Kyu Kim* ([§] These authors contributed equally to this work.)

Solar Energy Materials & Solar Cells 132, 47-55 (2015)

136. Correlative High Resolution Mapping of Strain and Charge Density in a Strained Piezoelectric Multilayer

Kyung Song, Christoph T. Koch, Ja Kyung Lee, Dong-Yeong Kim, Jong Kyu Kim, Amin Parvizi, Woo Young Jeong, Chan Gyung Park, Ye Cao, Tiannan Yang, Long-Qing Chen, and Sang Ho Oh

Advanced Materials Interfaces 2, 1400281 (2015)

 

2014

135. Efficient Photoelectrochemical Hydrogen Production from BiVO4-Decorated WO3 Helix Nanostructures

Xinjian Shi§, Il Yong Choi§, Kan Zhang, Jeong Kwon, Dong Yeong Kim, Ja Kyung Lee, Sang Ho Oh, Jong Kyu Kim*, Jong Hyeok Park* ([§] These authors contributed equally to this work.)

Nature Communications 5, 4775 (2014)

134. Strong Correlation between capacitance and breakdown voltage of GaInN/GaN light-emitting diodes

Jaehee Cho, E. Fred Schubert, Joong Kon Son, Dong-yeong Kim, Jong Kyu Kim

Electronic Materials Letters 10, 1155-1157 (2014)

133. Graphene oxide nanosheet wrapped white-emissive conjugated-polymer nanoparticles

Dong Youn Yoo, Nguyen Tu, Su Jin Lee, Eunji Lee, Seong-Ran Jeon, Sunyong Hwang, Ho SunLim, Jong Kyu Kim, Byeong-Kwon Ju, Heesuk Kim, Jung Ah Lim

ACS Nano 8, 4248-4256 (2014) 

132. Enhanced power conversion efficiency of quantum dot sensitized solar cells with near single-crystalline TiO2 nanohelixes used as photoanodes

Seung Hee Lee, Ho Jin, Dong Yeong Kim, Kyung Song, Sang Ho Oh, Sungjee Kim, E. F. Schubert, and Jong Kyu Kim

Optics Express 22, A867-A879 (2014)

131. ZnO Nanowires-based Antireflective Coatings with Double-Nanotextured Surfaces

Jae-Won Lee, Byeong Uk Ye, Dong-Yeong Kim, Jong Kyu Kim, Jong Heo, Hu Young Jeong, Myung Hwa Kim, Won Jun Choi, and Jeong Min Baik

ACS Applied Materials and Interfaces 6, 1375-1379 (2014) 

130. Three-dimensional Branched Nanowire Heterostructures as Efficient Light-Extraction Layer in Light-Emitting Diodes

Byeong Uk Ye, Buem Joon Kim, Joonmo Park, Hu Young Jeong, Gyeong Min Go, Jong Kyu Kim, Jin-Hoe Hur, Myung Hwa Kim, Jong-Lam Lee, and Jeong Min Baik

Advanced Functional Materials 24, 3384-3391 (2014)

129. Three-Dimensional Nanostructured Indium-Tin-Oxide Electrodes for Enhanced Performance of Bulk Heterojunction Organic Solar Cells

Hyunah Kwon, Juyoung Ham, Dong Yeong Kim, Seung Jae Oh, Subin Lee, Sang Ho Oh, E. Fred Schubert, Kyung-Geun Lim, Tae-Woo Lee, Sungjun Kim, Jong-Lam Lee*, and Jong Kyu Kim*

Advanced Energy Materials 4, 1301566 (2014) [Front Cover]

128. Down-conversion in Tm3+/Yb3+ doped glasses for multicrystalline silicon photo-voltaic module efficiency enhancement

Won Ji Park, Seung Jae Oh, Jong Kyu Kim, Jong Heo, Tomas Wagner, and Lucas Strizik

Journal of Non-Crystalline Solids 383, 181-183 (2014)

2013

127. Effect of quantum barrier thickness in the multiple-quantum-well active region of GaInN/GaN light-emitting diodes

Guan-Bo Lin, Dong-Yeong Kim, Qifeng Shan, David S. Meyaard, Jaehee Cho, E. Fred Schubert, Hyunwook Shim, Min-Ho Kim, Cheolsoo Sone, and Jong Kyu Kim

IEEE Photonics Journal, 5, 1600207 (2013) 

126. Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer

Jun Hyuk Park, Dong Yeong Kim, Sunyong Hwang, David Meyaard, E. Fred Schubert, Yu Dae Han, Joo Won Choi, Jaehee Cho, and Jong Kyu Kim

Applied Physics Letters, 103, 061104 (2013)

125. Enhanced Phosphor conversion efficiency of GaN-based white light-emitting diodes having dichroic-filtering contacts

Seung Jae Oh, Gyeongmin Go, Jong-Lam Lee, E. Fred Schubert, Jaehee Cho, and Jong Kyu Kim

Journal of Materials Chemistry C 1 (36), 5733-5740 (2013)

124. Ohmic contacts to n-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes

Seung Cheol Han, Jae-Kwan Kim, Jun Young Kim, Dong Min Lee, Jae-Sik Yoon, Jong Kyu Kim, E. Fred Schubert, and Ji-Myon Lee

Journal of Nanoscience and Nanotechnology 13, 5715-5718 (2013)

123. Freestanding Luminescent Films of Nitrogen-Rich Carbon Nanodots toward Large-Scale Phosphor-Based White-Llight-Emitting devices

Woosung Kwon, Sungan Do, Jinuk Lee, Sunyong Hwang, Jong Kyu Kim, and Shi-Woo Rhee

Chemistry of Materials 25, 1893-1899 (2013)

122. Efficiency droop in light-emitting diodes: Challenges and Countermeasures

Jaehee Cho, E. Fred Schubert, and Jong Kyu Kim

Laser and Photonics Reviews 7, No.3, 408-421, (2013) [Front Cover]

121. A near single crystalline TiO2 nanohelix array: enhanced gas sensing performance and its application as a monolithically integrated electronic nose

Sunyong Hwang, Hyunah Kwon, Sameer Chhajed, Ji Won Byon, Jeong Min Baik, Jiseong Im, Sang Ho Oh, Ho Won Jang, Seok Jin Yoon, and Jong Kyu Kim

Analyst 138, 443-450 (2013) [Inside Front Cover]

120. Enhanced broadband and omni-directional performance of polycrystalline Si solar cells by using discrete multilayer antireflection coatings

Seung Jae Oh, Sameer Chhajed, David J. Poxson, Jaehee Cho, E. Fred Schubert, Sung Ju Tark, Donghwan Kim, and Jong Kyu Kim

Optics Express 21, A157-A166 (2013)

119. Enhanced Omnidirectional Photovoltaic Performance of Solar Cells Using Multiple-Discrete-Layer Tailored- and Low-Refractive Index Anti-Reflection Coatings

Xing Yan, David J. Poxson, Jaehee Cho, Roger E. Welser, Ashok K. Sood, Jong Kyu Kim, and E. Fred Schubert

Advanced Functional Materials 23, 583-590 (2013)

118. Strain mapping of LED devices by dark-field inline electron holography: Comparison between deterministic and iterative phase retrieval approaches

Kyung Song, Ga Young Shin, Jong Kyu Kim, Sang Ho Oh, Christoph T. Koch

Ultramicroscopy 127, 119-125 (2013)

 

2012

117. Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

Hi Gyu Moon, Young-Soek Shim, Do Hong Kim, Hu Young Jeong, Myoungho Jeong, Ju Young Jung, Seung Min Han, Jong-Kyu Kim, Jin-Sang Kim, Hyung-Ho Park, Jong-Heun Lee, Seok-Jin Yoon, Ho Won Jang

Scientific Reports 2, 588 (2012)

116. Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma

Woo Jin Ha, Sameer Chhajed, Seung Jae Oh, Sunyong Hwang, Jong Kyu Kim, Jae-Hoon Lee and Ki-Se Kim

Applied Physics Letters 100, 132104 (2012)

115. Reduction of efficiency droop in GaInN/GaN Light-emitting diodes with thick AlGaN cladding layers

An Mao, Jaehee Cho, E. Fred Schubert, Joong Kon Son, Cheolsoo Sone, Woo Jin Ha, Sunyong Hwang, and Jong Kyu Kim

Electron. Mater. Lett. 8, 1~4 (2012)

114. Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

David S. Meyaard, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Sang-Heon Han, Min-Ho Kim, Cheolsoo Sone, Seung Jae Oh, and Jong Kyu Kim

Applied Physics Letters 100, 081106 (2012)

113. Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractions

Woo Jin Ha, Sameer Chhajed, Ashonita Chavan, Jae-Hoon Lee, Ki-Se Kim, and Jong Kyu Kim

Physica Status Solidi C 9, 851~854 (2012)

 

2011

112. Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop

Sunyong Hwang, Woo Jin Ha, Jong Kyu Kim, Jiuru Xu, Jaehee Cho, and E. Fred Schubert

Applied Physics Letters 99, 181115 (2011)

111. Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GaInN light-emitting diodes

Ahmed N. Noemaun, Frank W. Mont, Guan-Bo Lin, Jaehee Cho, E. Fred Schubert, Gi Bum Kim, Cheolsoo Sone, and Jong Kyu Kim

Journal of Applied Physics 110, 054510 (2011)

110. Efficiency droop in GaInN high-power light-emitting diodes

Martin F. Schubert and Jong Kyu Kim

International Journal of High Speed Electronics and Systems Vol. 20, No. 2., 247~265 (2011)

109. Nanostructured Multilayer Tailored-Refractive-Index Antireflection Coating for Glass with Broadband and Omnidirectional Characteristics

Sameer Chhajed, David J. Poxson, Xing Yan, Jaehee Cho, E. Fred Schubert, Roger E. Welser, Ashok K. Sook, and Jong Kyu Kim

Applied Physics Express 4, 052503 (2011)

108. Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN

Sameer Chhajed, Wonseok Lee, Jaehee Cho, E. Fred Schubert, and Jong Kyu Kim

Applied Physics Letters 98, 071102 (2011)

107. Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

Sameer Chhajed, Jaehee Cho, E. Fred Schubert, Jong Kyu Kim, Daniel D. Koleske, and Mary H. Crawford

Physica Status Solidi A, 1-4 (2011)

 

2010

106. Demonstration of optical interference filters utilizing tunable refractive index layers

David J. Poxson, Frank W. Mont, Martin F. Schubert, Jong Kyu Kim, Jaehee Cho, and E. Fred Schubert

Optics Express 18, No. 104, A594~A599 (2010)

105. Characteristics of Blue and Ultraviolet Light-Emitting Diodes with Current Density and Temperature

Jaehee Cho, Euijoon Yoon, Yongjo Park, Woojin Ha, and Jong Kyu Kim

Electronics Materials Letters 6, No. 2, 51~53 (2010)

104. Analysis of reverse tunnelling current in GaInN light-emitting diodes

Jaehee Cho, An Mao, E. Fred Schubert, Joong Kon Son, Cheolsoo Sone, Yongjo Park, and Jong Kyu Kim

Electronics Letters 46 (2), in press (2010)

103. Performance of antireflection coatings consisting of multiple discrete layers and comparison with continuously graded antireflection coatings

Martin F. Schubert, David J. Poxson, Frank W. Mont, Jong Kyu Kim, and E. Fred Schubert

Applied Physics Express 3, 082502 (2010)

102. Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes

Wonseok Lee, Min-Ho Kim, Di Zhu, Ahmed N. Noemaun, Jong Kyu Kim, and E. Fred Schubert

Journal of Applied Physics 107, 063102 (2010)

 

2009

101. Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

Hun Jae Chung, Rak Jun Choi, Min Ho Kim, Jae Woong Han, Young Min Park, Yu Seung Kim, Ho Sun Paek, Cheolsoo Sone, Yongjo Park, Jong Kyu Kim, and E. Fred Schubert

Applied Physics Letters 95, 241109 (2009)

100. Refractive-index-matched indium-tin-oxide electrodes for liquid crystal displays

Xing Yan, Frank W. Mont, David J. Poxson, Martin F. Schubert, Jong Kyu Kim, Jaehee Cho, and E. Fred Schubert

Japanese Journal of Applied Physics 48, 120203 (2009)

99. Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

Martin F. Schubert, Qi Dai, Jiuru Xu, Jong Kyu Kim and E. Fred Schubert

Applied Physics Letters 95, 191105 (2009)

98. Color tunable light-emitting diodes with modified pulse-width modulation

Jaehee Cho, Qifeng Shan, Jong Kyu Kim, and E. Fred Schubert

Phys. Status Solidi RRL 3, No. 9, 284~286 (2009)

97. Partial polarization matching in GaInN-based multiple quantum well blue LEDs using ternary GaInN barriers for a reduced efficiency droop

Min-Ho Kim, Wonseok Lee, Di Zhu, Martin F. Schubert, Jong Kyu Kim, E. Fred Schubert, and Yongjo Park

IEEE Journal of Selected Topics in Quantum Electronics 15 (2009)

96. Effect of chip geometry on breakdown voltage of GaInN light-emitting diodes

Jaehee Cho, Di Zhu, E. Fred Schubert, and Jong Kyu Kim

Electronics Letters 45, 755 (2009)

95. Engineered nanoporous and nanostructured films

Joel L. Plawsky, Jong Kyu Kim, and E. Fred Schubert

Materials Today 12, 36~45 (2009)

94. Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions

Roya Mirhosseni, Martin F. Schubert, Sameer Chhajed, Jaehee Cho, Jong Kyu Kim, and E. Fred Schubert

Optics Express 17, 10806~10813 (2009)

93. High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays

Ya-Ju Lee, Shawn-Yu Lin, Ching_Hua Chiu, Tien-Chang Liu, Hao-Chung Kuo, Shing-Chung Wang, Sameer Chhajed, Jong Kyu Kim, and E. Fred Schubert

Applied Physics Letters 94, 141111 (2009)

92. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

Q. Dai, M. F. Schubert, M. H. Kim, Jong Kyu Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas

Applied Physics Letters 94, 111109 (2009)

91. Broadband omnidirectional antireflection coatings optimized by genetic algorithm

David J. Poxson, Martin F. Schubert, Frank W. Mont, E. Fred Schubert, and Jong Kyu Kim

Optics Letters 34, 728 (2009)

90. The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Di Zhu, Jiuru Zu, Ahmed N. Noemaun, Jong Kyu Kim, E. Fred Schubert, Mary H. Crawford, and Daniel D. Koleske

Applied Physics Letters 94, 081113 (2009)

89. On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

Martin F. Schubert, Jiuru Zu, Qi Dai, Frank W. Mont, Jong Kyu Kim, and E. Fred Schubert

Applied Physics Letters 94, 081114 (2009)

88. Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Jiuru Xu, Martin F. Schubert, Ahmed N. Noemaun, Di Zhu, Jong Kyu Kim, E. Fred Schubert, Min-Ho Kim, Hun Jae Chung, Shkho Yoon, Cheolsoo Sone, and Yongjo Park

Applied Physics Letters 94, 011113 (2009)

 

~ 2008

87. Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars

Jong Kyu Kim, Ahmed N. Noemaun, Frank W. Mont, David Meyaard, E. Fred Schubert, David J. Poxson, Hyunsoo Kim, Cheolsoo Sone, Yongjo Park

Applied Physics Letters 93, 221111(2008)

86. Transcending the replace paradigm of solid-state lighting

Jong Kyu Kim and E. Fred Schubert

Optics Express 16, 21835 (2008)

85. Light- Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Jong Kyu Kim, Sameer Chhajed, Martin F. Schubert, E. Fred Schubert, Arthur J. Fischer, Mary H. Crawford, Jaehee Cho, Hyunsoo Kim, and Cheolsoo Sone

Advanced Materials 20, 801(2008)

84. High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes

Frank W. Mont, Jong Kyu Kim, Martin F. Schubert, E. Fred Schubert, and Richard W. Siegel

Journal of Applied Physics 103, 083120 (2008)

83. Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm

Martin F. Schubert, Frank W. Mont, Sameer Chhajed, David J. Poxson, Jong Kyu Kim, and E. Fred Schubert

Optics Express 16, 5290 (2008)

82. Realization of a near-perfect antireflection coating for silicon solar energy utilization

Mei-Ling Kuo, David J. Poxson, Yong Sung Kim, Frank W. Mont, Jong Kyu Kim, E. Fred Schubert, and Shawn-Yu Lin

Optics Letters 33, 2527 (2008)

81. Quantification of porosity and deposition rate of nanoporous films grown by oblique-angle deposition

D. J. Poxson, F. W. Mont, M. F. Schubert, Jong Kyu Kim, and E. Fred Schubert

Applied Physics Letters 93, 101914 (2008)

80. Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

M. F. Schubert, Jiuru Xu, Jong Kyu Kim, E. Fred Schubert, Min Ho Kim, Sukho Yoon, Soo Min Lee, Cheolsoo Sone, Tan Sakong, and Yongjo Part

Applied Physics Letters 93, 041102 (2008)

79. Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N

K. X. Chen, Q. Dai, W. Lee, Jong Kyu Kim, E. F. Schubert, J. Grandusky, M. Mendrick, X. Li, and J. A. Smart

Applied Physics Letters 93, 192108 (2008)

78. Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

Sameer Chhajed, Martin Schubert, Jong Kyu Kim, and E. Fred Schubert

Applied Physics Letters 93, 251108 (2008)

77. Kinetic study of Al-mole fraction in AlxGa1-xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy

Y. A. Xi, K. X. Chen, F. W. Mont, Jong Kyu Kim, W. Lee, E. F. Schubert, W. Liu, X. Li, and J. A. Smart

Applied Physics Letters 90, 051104 (2007)

76. Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer

Y. A. Xi, K. X. Chen, F. W. Mont, Jong Kyu Kim, E. F. Schubert, W. Liu, X. Li, and J. A. Smart

Journal of Crystal Growth 299, 59 (2007)

75. Studies of 4H-SiC wafer and its epitaxial layers grown by chemical vapor deposition

K. S. Ramaiah, I. Bhat, T. P. Chow, Jong Kyu Kim, E. Fred Schubert, D. Johnstone

Physica B – Condensed Matter 391, 35 (2007)

74. Optical thin-film materials with low refractive index for broad-band elimination of Fresnel reflection

J.-Q. Xi, Martin F. Schubert, Jong Kyu Kim, E. Fred Schubert, Minfeng Chen, Shawn-Yu Lin, W. Liu, and J. A. Smart

Nature Photonics 1, 176 (2007)

73. Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy

Y. A. Xi, K. X. Chen, F. W. Mont, Jong Kyu Kim, E. F. Schubert, C. Wetzel, W. Liu, X. Li, and J. A. Smart

Journal of Electronic Materials 36, 533 (2007)

72. Low-refractive-index materials: A new class of optical thin-film materials

E. F. Schubert, Jong Kyu Kim, and J. –Q. Xi

Phys. Stat. Sol. (b) 244, 3002-3008 (2007)

71. Distributed Bragg reflector consisting of high- and low-refractive index thin film layers made of the same material

Martin F. Schubert, J. –Q. Xi, Jong Kyu Kim, E. Fred Schubert

Applied Physics Letters 90, 141115 (2007)

70. Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates

Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Jaehee Cho

Applied Physics Letters 91, 051117 (2007)

69. Encapsulation shape with non-rotational symmetry designed for extraction of polarized light from unpolarized sources

Martin F. Schubert, Ahmed Noemaun, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, and Cheolsoo Sone

Optics Express 15, 10452-10457 (2007)

68. Linearly polarized emission from GaInN light-emitting diodes with polarization-enhancing reflector

Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, and Jaehee Cho

Optics Express 15, 11213-11218 (2007)

67. Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well active regions

K. X. Chen, Y. A. Xi, F. W. Mont, Jong Kyu Kim, E. F. Schubert, W. Liu, X. Li, and J. A. Smart

Journal of Applied Physics 101, 113102 (2007)

66. Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN

K. X. Chen, Q. Dai, W. Lee, Jong Kyu Kim, E. F. Schubert, W. Liu, S. Wu, X. Li, and J. A. Smart

Applied Physics Letters 91, 121110 (2007)

65. Origin of efficiency droop in GaN-based light-emitting diodes

Min-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, E. Fred Schubert, Joachim Piprek, and Yongjo Park

Applied Physics Letters 91, 183507 (2007)

64. Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes

Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Daniel D. Koleske, Mary H. Crawford, Steve R. Lee, Arthur J. Fischer, Gerald Thaler, and Michael A. Banas

Applied Physics Letters 91, 231114(2007)

63. GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive index indium-tin oxide layer

Jong Kyu Kim, Hong Luo, Yangang Xi, Jay M. Shah, Thomas Gessmann, and E. Fred Schubert

Applied Physics Letters 88, 013501 (2006)

62. Light Extraction in GaInN Light-Emitting Diodes using Diffuse Omnidirectional Reflectors

Jong Kyu Kim, H. Luo, Y. Xi, J. M. Shah, T. Gessmann, and E. F. Schubert

Journal of the Electrochemical Society 153, G105 (2006)

61. Effect of C/Si ratio on deep levels in epitaxial 4H-SiC

C. W. Litton, D. Johnstone, A. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, Jong Kyu Kim, and E. F. Schubert

Applied Physics Letters 88, 121914 (2006)

60. Very-low-refractive index optical thin films consisting of an array of SiO2 nanorods

J. -Q. Xi, Jong Kyu Kim, E. F. Schubert, Dexian Ye, T. -M. Lu, and Shaun-Yu Lin

Optics Letters 31, 601 (2006)

59. Surface studies of SiC epitaxial layers by chemical vapor deposition

Subba Ramaiah Kodigala, I. Bhat, Jong Kyu Kim, E. Fred Schubert

Material Science & Engineering B 129, 22 (2006)

58. GaN light-emitting triode for high-efficiency hole injection

Jong Kyu Kim, E. Fred Schubert, J. Cho, C. Sone, J. Y. Lin, H. X. Jiang, J. M. Zavada

Journal of The Electrochemical Society 153, G734 (2006)

57. Quantative assessment of diffusivity and specularity of surface-textured reflectors for light extraction in light-emitting diodes

Y. Xi, X. Li, Jong Kyu Kim, F. Mont, T. Gessmann, H. Luo, and E. F. Schubert

Journal of Vacuum Science and Technology A 24, 1627 (2006)

56. Trapped whispering-gallery optical modes in white light-emitting diode lamps with remote phosphor

H. Luo, Jong Kyu Kim, Y. Xi, E. Fred Schubert, Jaehee Cho, Cheolsoo Sone, and Yongjo Park

Applied Physics Letters 89, 041125 (2006)

55. Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy

Y. A. Xi, K. X. Chen, F. Mont, Jong Kyu Kim, C. Wetzel, E. F. Schubert, W. Liu, X. Li, and J. A. Smart

Applied Physics Letters 89, 103106 (2006)

54. Solid-state lighting – a benevolent technology

E. Fred Schubert, Jong Kyu Kim, Hong Luo, and J. -Q. Xi

Report on Progress in Physics 69, 3069-3099 (2006)

53. Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn/Ag microcontacts

Jong Kyu Kim, J.-Q. Xi, Hong Luo, E. Fred Schubert, J. Cho, C. Sone, Y. Park

Applied Physics Letters 89, 141123 (2006)

52. Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

Y. Xi, J.-Q. Xi, Th. Gessmann, J. M. Shah, Jong Kyu Kim, E. F. Schubert, A. J. Fischer, M. H. Crawford, K. H. A. Bogart, A. A. Allerman

Applied Physics Letters 86 , 031907(2005)

51. Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup

Jong Kyu Kim, H. Luo, E. F. Schubert, Jaehee Cho, Cheolsoo Sone, and Yongjo Park

Japanese Journal of Applied Physics 44, L649-L651 (2005)

50. Analysis of high-power packages for phosphor-based white light-emitting diodes

H. Luo, Jong Kyu Kim, E. Fred Schubert, Jaehee Cho, Cheolsoo Sone, and Yongjo Park

Applied Physics Letters 86, 243505 (2005)

49. Internal high reflectivity omni-directional reflectors

J.-Q. Xi, M. Ojha, Jong Kyu Kim, E. Fred Schubert, J. L. Plawsky, and W. N. Gill

Applied Physics Letters 87, p. 031111 (2005)

48. Silica Nanorod-Array Films with Very Low Refractive Indices

J.-Q. Xi, Jong Kyu Kim and E. Fred Schubert

Nano Letters 5, 1385-1387 (2005)

47. Solid-State Light Sources Getting Smart

E. Fred Schubert and Jong Kyu Kim

Science 308, 1274 (2005)

46. Junction temperature in ultraviolet light-emitting diodes

Y. Xi, Th. Gessmann, J.-Q. Xi, Jong Kyu Kim, J. M. Shah, E. F. Schubert, A. J. Fischer, M. H. Crawford, K. H. A. Bogart, and A. A. Allerman

Japanese Journal of Applied Physics 44, 7260-7266 (2005)

45. Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert, D. Johnstone, S. Akarca-Biyikli

Journal of Applied Physics 98, 106108 (2005)

44. GaN metal-semiconductor-metal ultraviolet photodetectors with transparent RuO2 and IrO2 Schottky contacts

Jong Kyu Kim and Jong-Lam Lee

Journal of The Electrochemical Society 151, G190 (2004)

43. P-type conductivity in bulk AlxGa1–xN and AlxGa1–xN/AlyGa1–yN superlattices with average Al mole fraction < 20 %

Jong Kyu Kim, E. L. Waldron, Y. –L. Lee, T. Gessmann, H. W. Jang, J. –L. Lee, and E. F. Schubert

Applied Physics Letters 84, 3310 (2004)

42. GaInN Light-Emitting Diodes with RuO2/SiO2/Ag Omni-Directional Reflector

Jong Kyu Kim, Thomas Gessmann, Hong Luo, and E. Fred Schubert

Applied Physics Letters 84, 4508 (2004)

41. Metal/GaN reaction chemistry and their electrical properties

C. C. Kim, S. K. Seol, Jong Kyu Kim, J.-L. Lee, Y. Hwu, P. Ruterana, G. Magaritondo, and J. H. Je

Physica Status Solidi (b) 241, 2771~2774 (2004)

40. Ohmic contacts for high-power LEDs

H. W. Jang, Jong Kyu Kim, S. Y. Kim, H. K. Yu, and Jong-Lam Lee

Physica Status Solidi (a) 201, 2831~2836 (2004)

39. Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes

Jong Kyu Kim, Ho Won Jang, and Jong-Lam Lee

Journal of Applied Physics 94, 7201 (2003)

38. Microstructural study of Pt contact on p-type GaN

Jong Kyu Kim, H. W. Jang, C. C. Kim, J. H. Je, K. A. Rickert, T. F. Kuech, and Jong-Lam Lee

Journal of Vacuum Science and Technology B 21(1), 87 (2003)

37. Effect of surface treatment on Schottky barrier height of p-type GaN

Jong Kyu Kim and Jong-Lam Lee

Journal of The Electrochemical Society 150, G209 (2003)

36. Electrical properties of metal contacts on laser-irradiated n-type GaN

Ho Won Jang, Jong Kyu Kim, J. Schroeder, T. Sands, and Jong-Lam Lee

Applied Physics Letters 82, 580 (2003)

35. Effect of micro-structural change on magnetic properties of Mn-implanted p-type GaN

Jeong Min Baik, Ho Won Jang, Jong Kyu Kim, Yoon Shon, Tae Won Kang, and Jong-Lam Lee

Applied Physics Letters 82, 583 (2003)

34. Effect of a Au Overlayer on Thermal Stability of Pt Transparent Ohmic Contact on P-type GaN

Jong Kyu Kim and J.-L. Lee

Journal of The Electrochemical Society 149, G266 ~ G270 (2002)

33. Mechanism for ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy

Jong Kyu Kim, Ho Won Jang, and Jong-Lam Lee

Journal of Applied Physics 91, 9214 (2002)

32. Low resistance Ti/Al Ohmic contact on undoped ZnO

Soo Young Kim, Ho Won Jang, Jong Kyu Kim, Chang Min Jeon, Won Il Park, Gyu-Chul Yi, and Jong-Lam Lee

Journal of Electronic Materials 31, 868 (2002)

31. Mechanism of two dimensional electron gas formation in AlxGa1-xN/GaN heterostructures

Ho Won Jang, Chang Min Jeon, Ki Hong Kim, Jong Kyu Kim, Sung-Bum Bae, Jung-Hee Lee, Jae Wu Choi, and Jong-Lam Lee

Applied Physics Letters 81, 1249~1251 (2002)

30. X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN

K. A. Rickert, A. B. Ellis, Jong Kyu Kim, Jong-Lam Lee, F. J. Himpsel, F. Dwikusuma, and T. F. Kuech

Journal ofApplied Physics 92, 6671 (2002)

29. GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contact

Jong Kyu Kim, H. W. Jang, C. M. Jeon, and Jong-Lam Lee

Applied Physics Letters 81, 4655~4657 (2002)

28. Microstructural investigation and magnetic properties of p-type GaN implanted with Mn+ ions

Jeong Min Baik, Jong Kyu Kim, Ho Won Jang, Ki Hong Kim, Yoon Shon, Tae Won Kang, and Jong-Lam Lee

Physica Status Solidi (b) 234, 943 (2002)

27. Microstructural and electrical investigation of Ni/Au Ohmic contact on p-type GaN

Jong Kyu Kim, C. C. Kim, T. S. Cho, J. H. Je, Y. Park, J. W. Lee, T. Kim, I. O. Jung, B. T. Lee, J.-L. Lee

Journal of Electronic Materials 30, L8~L12 (2001)

26. High-temperature structural behavior of Ni/Au contact on GaN (0001)

C. C. Kim, Jong Kyu Kim, J.-L. Lee, J. H. Je, M.-S. Yi, D. Y. Noh, Y. Hwu, P. Ruterana

Internet Journal of Nitride Semiconductor 6, 4 (2001)

25. Effects of surface treatment on the change of surface band bending of p-type GaN

Jong Kyu Kim, B. S. Kim, K. J. Kim, J. N. Kim, Y. Park, J. W. Lee, T. Kim, Jong-Lam Lee

Journal of Electronic Materials 30, 129~135 (2001)

24. Room Temperature Ohmic contact on n-type GaN using plasma treatment

H. W. Jang, C. M. Jeon, Jong Kyu Kim and J.-L. Lee

Internet Journal of Nitride Semiconductor 6, 8 (2001)

23. Effects of surface treatments on the electrical and the microstructural changes of Pd contact on p-type GaN

Jong Kyu Kim, C. C. Kim, T. S. Cho, J. H. Je, Y. Park, J.-L. Lee

Journal of Electronic Materials 30, 170~174 (2001)

22. Room-temperature ohmic contact on n-type GaN with surface treatment using Cl2 inductively-coupled plasma

H. W. Jang, C. M. Jeon, Jong Kyu Kim and J.-L. Lee

Applied Physics Letters 78, 2015-2017(2001)

21. Catalytic role of Au in Ni/Au contact on GaN(0001)

C. C. Kim, Jong Kyu Kim, J.-L. Lee, J. H. Je, M. S. Yi, D. Y. Noh, Y. Hwu, P. Ruterana

Applied Physics Letters 78, 3773~3775 (2001)

20. Positron annihilation study of Pd contacts on impurity-doped GaN

J.-L. Lee, M. H. Weber, Jong Kyu Kim, and K. G. Lynn

Applied Physics Letters 78, 4142~4144 (2001)

19. Reduction of Ohmic Contact Resistivity on P-Type GaN by Surface Treatment

Jong Kyu Kim, H. W. Jang, C. Jeon and J.-L. Lee

Current Applied Physics 1, 385 ~ 388 (2001)

18. The Effects of Au Overlayer on the Thermal Stability of Pt Ohmic Contact on P-type GaN

Jong Kyu Kim, Y.-H. Cho, J. S. Kwak, O.-H. Nam, J. W. Lee, Y. Park, T. Kim, J. W. Kim and J.-L. Lee

Journal of Korean Physical Society 37, 23~27 (2001)

17. Investigation for the Formation of Polarization-induced 2-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field Effect Transistors

H. W. Jang, C. M. Jeon, K. H. Kim, Jong Kyu Kim, S. B. Bae, J. H. Lee, J. W. Choi, and J.-L. Lee

Physica Status Solidi (b) 228, 621~624 (2001)

16. Au catalyzed structural and electrical evolution of Ni/Au contact to GaN

C. C. Kim, Jong Kyu Kim, J.-L. Lee, J. H. Je, M. S. Yi, D. Y. Noh, Y. Hwu, P. Ruterana

Physica Status Solidi (a) 188, 379-382 (2001)

15. Ohmic contact formation mechanism of Ni on n-type 4H-SiC

S. Y. Han, K. H. Kim, Jong Kyu Kim, H. W. Jang, K. H. Lee, N.-K. Kim, E. D. Kim and J-L Lee

Applied Physics Letters 79, 1816~1818(2001)

14. Low-resistance and thermally-stable ohmic contact on p-type GaN using Pd/Ni metallization

H. W. Jang, K. H. Kim, Jong Kyu Kim, S.-W. Hwang, J. J. Yang, K. J. Lee, S.-J. Son and J.-L. Lee,

Applied Physics Letters79, 1822-1824 (2001)

13. Transparent Pt Ohmic contact on p-type GaN with low resistivity using (NH4)2Sx treatment

Jong-Lam Lee, Jong Kyu Kim, J. W. Lee, Y. J. Park and T. Kim

Electrochemical and Solid-State Letters 3, 53-55 (2000)

12. Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaN

J.-L. Lee and Jong Kyu Kim

Journal of The Electrochemical Society 147, 2297~2302 (2000)

11. Pre-treatment effects by aqua-regia solution on field emission of diamond film

S. Y. Han, Jong Kyu Kim, J.-L. Lee, Y.-J. Baik

Applied Physics Letters 76, 3694~3696 (2000)

10. Micorstructural investigation of Ni/Au ohmic contact on p-type GaN

Jong Kyu Kim, J. H. Je, J. -L. Lee, Y. Park and B. T. Lee

Journal of The Electrochemical Society 147, 4645-4651 (2000)

9. 3.3 V Supply Single-Voltage-Operating Double-Planar-Doped AlGaAs/InGaAs PHEMT with Double Channel for 1.6 GHz Digital Mobile Communications

J.-L. Lee, Jong Kyu Kim, K. J. Choi, and H. M. Yoo

IEE Electronics Letters 36, 262-264 (2000)

8. Pt ohmic contact to p-type GaN with contact resistivity of 10-4 ohm cm2 using surface treatment

Jong Kyu Kim, Jong-Lam Lee, J. W. Lee, Y. Park and T. Kim

Journal of Korean Physical Society 35, S1063-S1066 (1999)

7. Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN

Jong-Lam Lee, Jong Kyu Kim, J. W. Lee, Y. Park and T. Kim

Solid-State Electronics 43, 435~437 (1999)

6. Reduction of Ohmic Contact Resistivity on P-type GaN by Surface Treatment

Jong-Lam Lee, Jong Kyu Kim, J. W. Lee, Y. Park and T. Kim

Physica Status Solidi (a) 176, 763~766 (1999)

5. Effect of surface treatment by (NH4)2Sx solution on the reduction of ohmic contact resistivity of p-type GaN

Jong Kyu Kim, Jong-Lam Lee, J. W. Lee, Y. Park and T. Kim

Journal of Vacuum Science and Technology B 17, 497~499 (1999)

4. Low transparent Pt ohmic contact on p-type GaN by surface treatment using aqua regia

Jong Kyu Kim, Jong-Lam Lee, J. W. Lee, Y. Park and T. Kim

IEEE Electronics Letters 35, 1676~1678 (1999)

3. The Effect of Au Overlayer on Ni Contacts to p-type GaN

Jong Kyu Kim, Jong-Lam Lee, J. W. Lee, Y. Park and T. Kim

Journal of Vacuum Science and Technology B 17, 2675~2678 (1999)

2. Ohmic contact formation mechanism of non-alloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy

Jong-Lam Lee, M. Weber, Jong Kyu Kim, J. W. Lee, Y. Park and T. Kim, K. Lynn

Applied Physics Letters 74, 2289~2291 (1999)

1. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment

Jong Kyu Kim, Jong-Lam Lee, J. W. Lee, H. E. Shin, Y. Park and T. Kim

Applied Physics Letters 73, 2953-2955 (1998)

 

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Pohang University of Science and Technology (POSTECH)

 

77 Cheongam-Ro, Nam-gu, Pohang-si, Kyungsangbuk-do, Republic of Korea (37673) 

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