Nitride Based Emitter

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MOVPE (Epitaxy)

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Novel Light Emitters

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AlGaN Deep-UV LEDs

  One main research goal at NPOL is the advanced growth, characterization and device fabrication of 2D layered materials and their heterostructures for emerging electronic and optoelectronic applications. More specifically, we are interested in wide band-gap III-Nitride materials such as hexagonal Boron Nitride (h-BN), Gallium Nitride (GaN), Alluminium Nitride (AlN) and its ternary alloys that can potentially realize highly efficient 2D materials-based electronics, power devices, and deep-ultraviolet (DUV) optoelectronics.


Current research interests in NPOL are:

(1) Large area, high quality epitaxy of h-BN  by Metal-Organic Chemical Vapor Deposition (MOCVD)

(2) Characterization and understanding the unique physical properties of the van der waals hetero-interface

(3) development of novel materials and structures for highly efficient DUV LEDs.

3D Nanostructure for Energy Application

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Water Splitting & CO2 Reduction

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Gas Sensors

  Another research goal is to explore and design novel electrical, optical, and optoelectronic properties of nanostructured materials to develop highly efficient devices. More specifically, we use the oblique angle deposition technique to design well-ordered nanostructures of diverse materials and morphology and their hierarchical combinations to realize optimal performance devices.

Current research interests in NPOL are:

(1) Developing highly efficient PEC electrodes for energy and environment technology

(2) Investigating the electrochemical mechanism of CO2 reduction and water splitting in nanostructured devices

(3) Designing high performance nanostructured gas sensors for optimized target applications;